1 March 1992 Far-infrared reflectance and ellipsometric studies of GaAs-AlAs superlattices
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56471
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
The most popular semiconductor superlattices (SL's) grown and investigated up to now are the GaAs—AlAs SL's. With regard to its infrared resp onse it is useful to treat the SL as a single uniaxial medium with e as in-plane component and e as out-of-plane component of the dielectric function tensor (the zdirectionis the growth direction of the SL). In a normal-incidence reflectivity experiment only is probed. To study and by it the layeringintroduced anisotropy it becomes necessary to use oblique incidence as it provides an electric field component normal to the SL surface as well as one parallel to it. There are reports using DFTS,' oblique incidence power reflection spectroscopy with polarized light,2 and ATR spectroscopy.3 As a very powerful method for such studies seems to be variable angle spectroscopic ellipsometry (VASE).4 It measures both the ratio of the amplitudes of p and s polarized reflected light and the cosine of the phase shift between p and s polarized reflected light, denoted usually by tan b and cos respectively.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Jahne, E. Jahne, A. Roseler, A. Roseler, Klaus H. Ploog, Klaus H. Ploog, } "Far-infrared reflectance and ellipsometric studies of GaAs-AlAs superlattices", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56471; https://doi.org/10.1117/12.56471

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