1 March 1992 Investigation on impurity behavior in semiconductors by use of Fourier transform spectroscopy
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56287
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
Abstract
We report the comprehensive results obtained in our group in the investigation of impurity behavior in semiconductors by use of Fourier transform spectroscopy. We put emphasis in this paper on the electronic transitions of shallow impurities in ultrapure silicon. The new results reported here include the discovery and investigation of new shallow centers, the photothermal ionization spectroscopy of phosphorus in Si under high magnetic field, and the high sensitivity and resolution of PTIS as used for detection of shallow impurities in ultrapure silicon.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shue-Chu Chen, Shue-Chu Chen, } "Investigation on impurity behavior in semiconductors by use of Fourier transform spectroscopy", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56287; https://doi.org/10.1117/12.56287
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