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1 March 1992 Layered semiconductor structures FTS diagnostics
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56499
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
Abstract
IR reflectance spectra of Si and GaAs/GaAlAs structures with as many as up to 5 surface layers have been measured. Model spectra have been constructed and compared with measured ones. The fitting procedure gives the layers thickness, the free charge carriers concentration and the mole fraction of AlAs in AlGaAs in each layer.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Boltar and Valeri A. Fedirko "Layered semiconductor structures FTS diagnostics", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); https://doi.org/10.1117/12.56499
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