1 March 1992 Spectroscopic requirements for optical characterization of semiconductor materials
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56317
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
Abstract
Semiconductor materials are used for the fabrication of devices for electronic and optical applications. Optical characterization techniques are among the most powerful methods to assess the general quality of semiconductor crystals. The optical methods can determine impurity content as well as assessing crystal morphology. They can also be used to study other properties of newly created materials. In practical terms they are non-destructive and simple to perform (no contacts required). Optical characterization methods monitor electronic transitions, local vibrational modes and other processes inside the material studied. The photons associated with these transitions carry very precise information about energy levels of the pure material and those induced by the presence of the impurities. These assaying methods can be classified under two general categories, according to the way the optical signature is supplied. Emission-type measurements include photoluminescence and Raman spectroscopy while absorption-type measurements include IR absorption, photocurrent and photothermal ionization spectroscopy (PTIS).
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre J. Villemaire, Andre J. Villemaire, Abel Zacharie, Abel Zacharie, Henry L. Buijs, Henry L. Buijs, "Spectroscopic requirements for optical characterization of semiconductor materials", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56317; https://doi.org/10.1117/12.56317
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