1 October 1991 Modified active layer for reliable efficient Gunn diodes
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157612 (1991) https://doi.org/10.1117/12.2297751
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
A structure of active layer for relieble efficient gunn diodes is suggested. Such layer was grown by MBE and good gunn diodes were achieved.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Gorelik, "Modified active layer for reliable efficient Gunn diodes", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157612 (1 October 1991); doi: 10.1117/12.2297751; https://doi.org/10.1117/12.2297751
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