1 October 1991 Modified active layer for reliable efficient Gunn diodes
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157612 (1991) https://doi.org/10.1117/12.2297751
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
A structure of active layer for relieble efficient gunn diodes is suggested. Such layer was grown by MBE and good gunn diodes were achieved.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Gorelik, J. Gorelik, } "Modified active layer for reliable efficient Gunn diodes", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157612 (1 October 1991); doi: 10.1117/12.2297751; https://doi.org/10.1117/12.2297751
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