1 October 1991 The effect of interband excitation on the cyclotron resonance of InGaAs/InP quantum wells
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157629 (1991) https://doi.org/10.1117/12.2297794
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
We report the first data on the influence of resonant, selective photo excitation in the visible range on the FIR-cyclotron resonance of InGaAs/InP quantum wells. The experimental setup consists of an optically pumped FIR-laser magneto-spectrometer in connection with a 15 Tesla superconducting magnet and and the output of a monochromator guided directly onto the sample surface. In this way the excitation energy could be tuned and matched to the interband and excitonic transitions in both the quantum wells and the substrate. Both, intensity change and shift of the magnetic resonance position in the observed FIR-transmission were recorded for different, selected excitation energies for different FIR-radiation wavelenghts. The observed structures are interpreted in the context of the cyclotron resonance of electrons and holes, as well of intersubband transitions. Investigation of the time-resolved response function of the signal provides additional information on the physical mechanism involved. The presented experimental results demonstrate the efficiency of this method for the investigation of systems lacking initial carrier population.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Shen, S. C. Shen, } "The effect of interband excitation on the cyclotron resonance of InGaAs/InP quantum wells", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157629 (1 October 1991); doi: 10.1117/12.2297794; https://doi.org/10.1117/12.2297794
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