1 October 1991 Time of energy relaxation of carriers in H--band
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15762C (1991) https://doi.org/10.1117/12.2297797
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Investigation of Impurity conduction band which formed as a result of interaction of two electron (H--like) impurity states presents a great interest both for physics of irregular systems and for physics of semiconductors. Detailed investigation of the process of the formation of H--band were carried out in [1,2]. However up to now there are not numerous experimental works on H--band because it is rather difficult to separate the conduction on H--band from the other types of conduction.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. Demin, A. I. Demin, } "Time of energy relaxation of carriers in H--band", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15762C (1 October 1991); doi: 10.1117/12.2297797; https://doi.org/10.1117/12.2297797
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