1 October 1991 Narrow band tunable sub-millimeter hot hole semiconductor laser
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15762G (1991) https://doi.org/10.1117/12.2297801
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
The hot holes population inversion (PI) and FIR amplification mechanism in germanium in crossed electric and magnetic fields at low temperature were proposed in 1979 [1]. The hot holes lasers were constructed for the first time in 1982 at LSTU [2]. The stimulated emission due to light holes (LH) - to heavy holes (HH) transitions (Fig.1) was observed later by Andronov with coworkers and Komiyama with coworkers [3]. The stimulated intersubband emission provided with nonselective resonator covers the spectral ranges λ = 80...120 and 150..210 μm.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. E. Vorobjev, L. E. Vorobjev, } "Narrow band tunable sub-millimeter hot hole semiconductor laser", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15762G (1 October 1991); doi: 10.1117/12.2297801; https://doi.org/10.1117/12.2297801
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