1 October 1991 Direct detection with Nb-based tunnel junctions at 74 GHz
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157633 (1991) https://doi.org/10.1117/12.2297824
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Apart from the great success of SIS-junctions as mixers in heterodyne receivers there are several other reasons to intensify investigations of SIS-junctions as direct detectors. These devices can be produced as single junctions and arrays for use. in waveguide systems or in planar antennas by standard lithographic techniques. Impedance matching structures and filter elements can be incorporated easily. Recent developments1,2 in junction technology show strong improvements of junction performance. Areas of 0.5μm2 and leakage currents as low as 50nA have been realized. Since the final sensitivity (NEP) of SIS-junctions as direct detectors is limited ultimately by the shot noise of the bias current (NEP∼√IL), a low leakage current IL, is highly important for these devices. Using these improved SIS-junctions, NEP's down to 10-17W/√Hz seem to be possible with He4-cooled devices. A crude estimate for the time constant of a SIS-direct detector yields the inverse of the gap frequency h/∆ or the sumgap frequency h/2∆, which gives very small values of 1 − 10psec.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Mees, J. Mees, } "Direct detection with Nb-based tunnel junctions at 74 GHz", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157633 (1 October 1991); doi: 10.1117/12.2297824; https://doi.org/10.1117/12.2297824
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