1 October 1991 FIR nonlinear methods in semiconductor transport
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157636 (1991) https://doi.org/10.1117/12.2297827
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
The transport of charge carriers in semiconductors is fundamental to electronics — usually however one measures average properties only, e.g. the mobility due to collisions averaged over all carrier energies. Several works have shown that radiation in the far infrared can selectively interact with certain subensembles of the carrier distribution, and thus make possible to perform state-selective measurements of e.g. the scattering time (ns to fs time scale). By using step-tunable pulsed gas lasers, with power up to 1 MW, a nonthermal population can be induced resulting in saturated transmission, saturated photo-conductance and nonlinearities in other effects such as in the photon drag effect. A great advantage over common optical pumping in the near infrared or visible spectrum is that the far-infrared radiation does not produce any extra electron-hole pairs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fritz Keilmann, "FIR nonlinear methods in semiconductor transport", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157636 (1 October 1991); doi: 10.1117/12.2297827; https://doi.org/10.1117/12.2297827
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