1 October 1991 Characterisation of CdTe/CdxHg1-xTe/CdTe heterostructures on GaAs substrates by dispersive Fourier transform spectroscopy
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157637 (1991) https://doi.org/10.1117/12.2297828
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
We have recently [1] described modifications to an NPL far infrared cube interferometer in which the radiation is brought to a focus in each arm to enable amplitude and phase reflection measurements on small (area > 3x3mm2) solid samples to be made by dispersive Fourier transform spectroscopy. We now describe the use of this instrument to study the complex far infrared reflectivity of a series of semiconductor structures consisting of three epitaxial layers (CdTe/CdxHg1-xTe/CdTe) deposited on GaAs substrates. The epilayers were deposited by plasma enhanced MOCVD [2] at temperatures as low as 180°C, with thicknesses in the range 1-2 μm and Cd concentrations in the range x=0.24-0.61.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. K. Kang, "Characterisation of CdTe/CdxHg1-xTe/CdTe heterostructures on GaAs substrates by dispersive Fourier transform spectroscopy", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157637 (1 October 1991); doi: 10.1117/12.2297828; https://doi.org/10.1117/12.2297828
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