1 October 1991 Far infrared study of surface and interface polaritons in CdTe/CdxHg1-xTe/CdTe heterostructures deposited on GaAs substrates by plasma enhanced MOCVD
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157639 (1991) https://doi.org/10.1117/12.2297830
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
A selection of far infrared techniques has been used to investigate guided waves and surface and interface polaritons propagating in a series of CdTe/CdxHg1-xTe/CdTe heterostructures deposited on GaAs substrates by plasma enhanced MOCVD. The thicknesses of the epilayers were in the range 2-4 μm and the mixed crystal (CMT) layers had Cd concentrations in the range x = 0.24-0. 6 1 .
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Dumelow, T. Dumelow, } "Far infrared study of surface and interface polaritons in CdTe/CdxHg1-xTe/CdTe heterostructures deposited on GaAs substrates by plasma enhanced MOCVD", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157639 (1 October 1991); doi: 10.1117/12.2297830; https://doi.org/10.1117/12.2297830
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