1 October 1991 Self-aligned metal-SiO2-InP based MISFETs having modulation doped channels
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15763A (1991) https://doi.org/10.1117/12.2297831
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
A novel metal-SiO2-InP MISFET (metal-insulator semiconductor field effect transistor) structure, incorporating a modulation doped channel and the self-aligned gate feature of Si MOSFETs, is proposed. Analytical results on current-voltage and transconductance characteristics are presented. Significant enhancement of performance over conventional MISFETs, employing SiO2 as an insulator, is reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Jain, F. Jain, } "Self-aligned metal-SiO2-InP based MISFETs having modulation doped channels", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15763A (1 October 1991); doi: 10.1117/12.2297831; https://doi.org/10.1117/12.2297831
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