1 October 1991 Influence of far infrared radiation on the current of double barrier resonant tunneling devices
Author Affiliations +
Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15763D (1991) https://doi.org/10.1117/12.2297834
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
We have studied the influence of Far Infra-Red (FIR) radiation on the current of Double Barrier Resonant Tunneling Devices (DBRTD), consisting of consecutive layers of GaAs/AlGaAs. The current-voltage- (I(V)-) characteristic of these devices is strongly nonlinear and shows for device 1 (5nm well) two regions of negative differential resistance (NDR) and more than twenty for device 2 and 3 (60nm, 120nm well), since for these latter devices the energy levels are closer spaced due to the wider quantum wells [1].
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Kutter, C. Kutter, } "Influence of far infrared radiation on the current of double barrier resonant tunneling devices", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15763D (1 October 1991); doi: 10.1117/12.2297834; https://doi.org/10.1117/12.2297834
PROCEEDINGS
2 PAGES


SHARE
Back to Top