1 October 1991 On resonance photo-tunneling in quantum well-heterostructures
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15763E (1991) https://doi.org/10.1117/12.2297835
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Spectral analysis of pZnSb-nCdTe heterostructures (HS) obtained by a laser-pulse epitaxy method has shown that such HS exhibit photo-sensitivity beyond the absorption edge at T=78 K for a narrowband semiconductor. Up to a wavelength λ=7μm [1]. This photo-sensitivity value is only 6 times smaller than its maximum at a fundamental absorption wavelength λ=4.3μm. Due to HS thickness, this effect cannot be explained by the usual tunneling
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ar. G. Alexanian, Ar. G. Alexanian, } "On resonance photo-tunneling in quantum well-heterostructures", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15763E (1 October 1991); doi: 10.1117/12.2297835; https://doi.org/10.1117/12.2297835
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