1 October 1991 A photoacoustic cell for FIR magnetospectroscopy on semiconductors at low temperatures
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157648 (1991) https://doi.org/10.1117/12.2297865
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Nonlinear dynamical properties of carrier transport in semiconductors like self-sustained oscillations and chaotic fluctuation are of strong current interest. In order to understand dynamical phenomena in high-purity semiconductors on a microscopic basis, detailed knowledge of the recombination kinetics of charge carriers is needed. A powerful method to study the kinetics of carriers bound to shallow impurities represents saturation spectroscopy using high-power FIR. lasers [1] [2]. Saturation of photoionisation yields the product στ where σ is the photoionisation cross section and τ the recombination time. To evaluate τ the cross section σ must be known. As many high-purity materials are only available in form of thin epitaxial layers, σ cannot be measured with sufficient accuracy by simple transmission spectroscopy because the absorption is usually to small. A much more sensitive method is given by the photoacoustic effect.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Schilz, "A photoacoustic cell for FIR magnetospectroscopy on semiconductors at low temperatures", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157648 (1 October 1991); doi: 10.1117/12.2297865; https://doi.org/10.1117/12.2297865
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