1 October 1991 A photoacoustic cell for FIR magnetospectroscopy on semiconductors at low temperatures
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157648 (1991) https://doi.org/10.1117/12.2297865
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Nonlinear dynamical properties of carrier transport in semiconductors like self-sustained oscillations and chaotic fluctuation are of strong current interest. In order to understand dynamical phenomena in high-purity semiconductors on a microscopic basis, detailed knowledge of the recombination kinetics of charge carriers is needed. A powerful method to study the kinetics of carriers bound to shallow impurities represents saturation spectroscopy using high-power FIR. lasers [1] [2]. Saturation of photoionisation yields the product στ where σ is the photoionisation cross section and τ the recombination time. To evaluate τ the cross section σ must be known. As many high-purity materials are only available in form of thin epitaxial layers, σ cannot be measured with sufficient accuracy by simple transmission spectroscopy because the absorption is usually to small. A much more sensitive method is given by the photoacoustic effect.
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A. Schilz, A. Schilz, } "A photoacoustic cell for FIR magnetospectroscopy on semiconductors at low temperatures", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157648 (1 October 1991); doi: 10.1117/12.2297865; https://doi.org/10.1117/12.2297865
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