1 October 1991 Microwave transmission of II-VI-epitaxial layers in a partially filled waveguide
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 157649 (1991) https://doi.org/10.1117/12.2297866
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Contacting II-VI-semiconductors has always been a problem and this problem still isn't solved up to now. Therefore we investigate CdxHg1-xTe epitaxial layers (0 ≤ x ≤ 0.22) by means of a contactless microwave bridge technic in a frequency range between 8 GHz and 12 GHz. These layers are grown on Cd0.96Zn0.04Te substrates by molecular beam epitaxy (MBE). The sample with a layer thickness between 1 μm and 5μm is inserted into a closed rectangular waveguide in such a way that we face the problem of microwave transmission in a partially filled waveguide (see Fig. 1).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Greiner, P. Greiner, } "Microwave transmission of II-VI-epitaxial layers in a partially filled waveguide", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157649 (1 October 1991); doi: 10.1117/12.2297866; https://doi.org/10.1117/12.2297866
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