1 October 1991 IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15766I (1991) https://doi.org/10.1117/12.2297947
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
The concept of far infrared photocathodes involving work functions at interfaces between lightly doped and heavily doped silicon has been previously discussed and device structures were shown to have response out to 60 microns.[1] Si, Ge and InGaAs p-i-n structures with different interfacial workfunctions giving rise to longwavelength thresholds up to 200 microns are reported here. Preliminary estimates of responsivity and detectivity for these non-optimized samples are encouraging. Work function estimates based on the different cutoff wavelengths show that this approach can be used to tailor the cutoff wavelength by changing the impurity concentration near the metal-insulator transition.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. U. Perera, A. G. U. Perera, } "IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766I (1 October 1991); doi: 10.1117/12.2297947; https://doi.org/10.1117/12.2297947
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