1 October 1991 GaAs Schottky diodes for mixing applications beyond 1THz
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15766J (1991) https://doi.org/10.1117/12.2297948
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
GaAs Schottky barrier mixer diodes have been successfully used in heterodyne receivers throughout the millimeter and submillimeter wavelength ranges [1,2]. These receivers combine excellent spectral resolution (∆ν/ν=10-6) and exceptional sensitivity, and have given scientists an important tool for use in such fields as radio astronomy [3], atmospheric studies [4], chemical spectroscopy [5] and plasma diagnostics [6]. Although superconducting devices (SIS junctions) have recently achieved better performance at millimeter wavelengths [7], it is not certain when, or if, SIS technology will be extended to terahertz frequencies. Since there are a great many scientific programs which rely on submillimeter wavelength heterodyne technology, including studies of ozone depletion [8] and space based astronomy [9], it is critical that the Schottky technology be pushed to its fundamental limits.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. W. Crowe, T. W. Crowe, } "GaAs Schottky diodes for mixing applications beyond 1THz", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766J (1 October 1991); doi: 10.1117/12.2297948; https://doi.org/10.1117/12.2297948
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