1 October 1991 Noise dependence of submillimeter wave Pt/GaAs Schottky diodes on interface defects and temperature
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15766L (1991) https://doi.org/10.1117/12.2297950
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Fabrication processes of Pt/GaAs Schottky diodes have been studied for obtaining submillimeter wave detector/mixers with high performance. We have been studying and fabricating dot-matrix Pt/GaAs Schottky diodes which have advantages of high speed responsivity and room temperature operation. Noise characteristic of the diode is one of the important measure for the submillimeter wave detector/mixers.

The noise characteristics are influenced by defects localized near Pt/GaAs interface, which defects are introduced in processes of wet etching, chemical surface treatments, reactive ion etching and deposition of SiO2 insulating layer. We have measured the diode noise characteristics, as the diode temperature was changed. Effects of chemical processes, composition of GaAs surface, damages by SiO2 sputtering on the diode noise have been measured.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Suzuki, "Noise dependence of submillimeter wave Pt/GaAs Schottky diodes on interface defects and temperature", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766L (1 October 1991); doi: 10.1117/12.2297950; https://doi.org/10.1117/12.2297950
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