The noise characteristics are influenced by defects localized near Pt/GaAs interface, which defects are introduced in processes of wet etching, chemical surface treatments, reactive ion etching and deposition of SiO2 insulating layer. We have measured the diode noise characteristics, as the diode temperature was changed. Effects of chemical processes, composition of GaAs surface, damages by SiO2 sputtering on the diode noise have been measured.
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T. Suzuki, "Noise dependence of submillimeter wave Pt/GaAs Schottky diodes on interface defects and temperature," Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766L (1 October 1991);