1 October 1991 Electron ballistic transport in submicron GaAs Shottky barrier diode
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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15766N (1991) https://doi.org/10.1117/12.2297952
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland
Abstract
Electron transport in submioron GaAs Shottky diode has been simulated under the barrier capacitance modulation conditions by high frequency (f>100 GHz) voltage pumping signal.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Yu. Gorbachev, "Electron ballistic transport in submicron GaAs Shottky barrier diode", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766N (1 October 1991); doi: 10.1117/12.2297952; https://doi.org/10.1117/12.2297952
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