Fabrication, performance, and reliability of strained InGaAs QW lasers

Naresh Chand; Niloy K. Dutta; Sung-Nee G. Chu; William S. Hobson; John Lopata; R. Wetzel

doi:10.1117/12.135364

1 February 1992 Fabrication, performance, and reliability of strained InGaAs QW lasers

Naresh Chand, Niloy K. Dutta, Sung-Nee G. Chu, William S. Hobson, John Lopata, R. Wetzel

Proceedings Volume 1580, Fiber Optic Components and Reliability; (1992) https://doi.org/10.1117/12.135364
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

Very low threshold current density (<50A cm-2, close to the theoretical limit), high quantum efficiency, high power output, low temperature sensitivity, and higher pumping efficiency of 0.98 µm wavelength InGaAs strained quantum well lasers, and very low amplifier noise close to the 3 dB quantum limit have made the 0.98 µm wavelength as the best choice for pumping Er3+-doped fiber amplifiers. Like any other semiconductor laser, these lasers also degrade, but no failure mode specific to these lasers has been observed despite a compressive strain of 1-3 x 10+10 dynes/cm2 in the active QW region. On the contrary, these lasers have immunity to sudden failure and for reasons discussed in the text they show signs of longer lifetimes than their AlGaAs/GaAs counterparts. We expect the 0.98 µm laser reliability to improve in the near future to a level comparable to any other types of semiconductor laser. Narrow far field, high power output in the fundamental transverse mode centered at 0.98 ± 0.005 µm, planarity of the structure for ease of mounting and better heat sinking, and long lifetimes are the major laser structure design considerations.

Citation Download Citation

Naresh Chand, Niloy K. Dutta, Sung-Nee G. Chu, William S. Hobson, John Lopata, and R. Wetzel "Fabrication, performance, and reliability of strained InGaAs QW lasers", Proc. SPIE 1580, Fiber Optic Components and Reliability, (1 February 1992); https://doi.org/10.1117/12.135364

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