1 February 1992 Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5μm spectral range
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Abstract
GalnAsSb/GaAlAsSb SAM APDs were fabricated and investigated. The GaAlAsSb solid solution of the "resonant" composition (x=0.04, Eg = ?0 ) was used in the multiplication region of the devices. Large ionization rate ratio (?/? =60) and low excess noise factor ( F=Mf f=0.2) was experimentally observed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maya P. Mikhailova, Igor A. Andreev, Alexej N. Baranov, S. V. Mel'nikov, Yulia P. Smorchkova, and Yury P. Yakovlev "Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5μm spectral range", Proc. SPIE 1580, Fiber Optic Components and Reliability, (1 February 1992); doi: 10.1117/12.135386; https://doi.org/10.1117/12.135386
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