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1 December 1992 Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding
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Abstract
A comprehensive, self-consistent thermal-electrical model of etched-well GaAs/A1GaAs vertical-cavity surface-emitting lasers (VCSEL5) is utilized to study thermal properties of cw operating devices. Various configurations of doping concentration in both cladding layers are considered. It is shown that significant improvement in controlling excessive heating of VCSELs can be achieved by relatively straightforward technological means, provided thermal behavior of the device is well understood. In particular, by increasing the doping level in the P-AlGaAs layer, the active region temperature can be reduced dramatically. The N-AlGaAs doping level has a decisive influence on the homogeneity of current injection into the active region.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wlodzimierz Nakwaski "Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321814
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