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1 December 1992 Monolithic balanced pin-JFET front-end for 1.3-1.5 μn coherent transmission
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InGaAs based balanced pin-JEET front-ends have been fabricated, using a single step MBE growth and a diffused gate technology. High responsivity photodiodes were obtained by the use of an A1GaInAS window layer, and a good balance in pin characteristics was obtained. The JEET structure incorporates a two doping level channel. Input noise density of the front-ends was measured to be below 15 pAiÖHz up to 1 GHz, togetherwith a common mode noise rejection below -35dB.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louis Giraudet "Monolithic balanced pin-JFET front-end for 1.3-1.5 μn coherent transmission", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992);


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