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1 December 1992 Monolithic integration of AlGaAs/GaAs surface-emitting LEDs with silicon- or GaAs-based bipolar transistor driver circuits
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Abstract
The design, fabrication, and testing of a new monolithic transmitter for fiber optic interconnects is described. The transmitter is comprised of a surface-emitting AlGaAs/GaAs light-emitting diode (LED) integrated with a bipolar transistor driver circuit configured as a differential-pair current switch. Two approaches are being are being pursued: 1. the LED is integrated with a silicon-based bipolar transistor driver circuit using a novel heteroepitaxy process based on a combined chemical-vapor deposition Iliquid-phase epitaxy technique, and 2. the LED is integrated with a GaAs-based bipolar transistor driver circuit using selective liquid-phase epitaxy and diffusion processes. Transmitter components have demonstrated sub-nanosecond rise-times.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey E. Cotter "Monolithic integration of AlGaAs/GaAs surface-emitting LEDs with silicon- or GaAs-based bipolar transistor driver circuits", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321821
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