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1 December 1992 Novel processing techniques for optoelectonic devices and their integration
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Abstract
Novel processing techniques currently being developed for the fabrication of optoelectronic devices will be described, including fabrication of low threshold lasers using in-situ-monitored reactive ion etching, the use of impurity-induced-disordering to form high-performance lasers with self-aligned Si/Zn-diffused junctions, and the fabrication of in-plane surface-emitting lasers with 45° etched facets. Application to the monolithic integration of optoelectronic devices will be discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James L. Merz "Novel processing techniques for optoelectonic devices and their integration", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321799; https://doi.org/10.1117/12.2321799
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