Translator Disclaimer
1 December 1992 Optical waveguide modulation in an (In,Ga)As strain layer superlattice structure
Author Affiliations +
Abstract
We report on the design and experimental characteristics of waveguide electroabsorption modulator structures realised in (In,Ga)As strain superlattice material grown by MBE. Maximum modulation depths at wavelengths near to 980 nm are obtained with 15% indium fraction. A switching ratio of nearly 2:1 was achieved with -8 V applied bias.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. T. Lee "Optical waveguide modulation in an (In,Ga)As strain layer superlattice structure", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321809
PROCEEDINGS
PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

High differential efficiency tilted wave laser
Proceedings of SPIE (March 07 2014)
Physics And Applications Of Quantum Wells In Waveguides
Proceedings of SPIE (September 11 1985)
980-nm high-power semiconductor lasers
Proceedings of SPIE (October 19 2001)

Back to Top