Fine structure characteristics of semiconductor laser diode coupled to an external cavity

Ali Ghiasi; Anand Gopinath

doi:10.1117/12.50909

1 December 1991 Fine structure characteristics of semiconductor laser diode coupled to an external cavity

Ali Ghiasi, Anand Gopinath

Proceedings Volume 1583, Integrated Optical Circuits; (1991) https://doi.org/10.1117/12.50909
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

A semiconductor laser diode with a nominal relaxation oscillation frequency of 6 GHz with an anti-reflection coating on one facet is coupled to an external high Q cavity with the fundamental resonance set to 5 GHz. The laser diode is mounted in a custom microstrip fixture and is driven by a HP-8510A network analyzer. The experimental and theoretical results show enhancement greater than 25 dB at the external cavity resonance frequencies. The results also show holes near the resonance frequencies which may affect the useful bandwidth.

Citation Download Citation

Ali Ghiasi and Anand Gopinath "Fine structure characteristics of semiconductor laser diode coupled to an external cavity", Proc. SPIE 1583, Integrated Optical Circuits, (1 December 1991); https://doi.org/10.1117/12.50909

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