1 December 1991 Fine structure characteristics of semiconductor laser diode coupled to an external cavity
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Proceedings Volume 1583, Integrated Optical Circuits; (1991) https://doi.org/10.1117/12.50909
Event: OE Fiber, 1991, Boston, MA, United States
Abstract
A semiconductor laser diode with a nominal relaxation oscillation frequency of 6 GHz with an anti-reflection coating on one facet is coupled to an external high Q cavity with the fundamental resonance set to 5 GHz. The laser diode is mounted in a custom microstrip fixture and is driven by a HP-8510A network analyzer. The experimental and theoretical results show enhancement greater than 25 dB at the external cavity resonance frequencies. The results also show holes near the resonance frequencies which may affect the useful bandwidth.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Ghiasi and Anand Gopinath "Fine structure characteristics of semiconductor laser diode coupled to an external cavity", Proc. SPIE 1583, Integrated Optical Circuits, (1 December 1991); doi: 10.1117/12.50909; https://doi.org/10.1117/12.50909
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