1 December 1991 Silicon nitride single-polarization optical waveguides on silicon substrates
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Proceedings Volume 1583, Integrated Optical Circuits; (1991); doi: 10.1117/12.50902
Event: OE Fiber, 1991, Boston, MA, United States
Abstract
We present a model for a single polarization optical waveguide structure and demonstrate experimental verification of the model. The optical «waveguide structure involves a silicon nitride film deposited onto an oxidized silicon wafer to form a single mode planar waveguide. We achieve single polarization by choosing layer thicknesses so that the attenuation due to substrate coupling for the TM mode is much larger than that for the TE mode. Calculations are presented defining ranges of design parameters fa- which TM mode attenuation is 3-4 orders of magnitude higher than that for die TE mode. Measured data is presented for which the ratio of TM mode loss to TE mode loss is over 750 for a TE loss of 0.28 dB/cm at a wavelength of 632.8 nm.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory N. De Brabander, Joseph T. Boyd, Howard E. Jackson, "Silicon nitride single-polarization optical waveguides on silicon substrates", Proc. SPIE 1583, Integrated Optical Circuits, (1 December 1991); doi: 10.1117/12.50902; https://doi.org/10.1117/12.50902
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KEYWORDS
Waveguides

Polarization

Silicon

Signal attenuation

Wave propagation

Semiconducting wafers

Solids

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