1 February 1992 Characterization of silicon damage during LDD oxide spacer etch with the use of thermal-wave-modulated reflectance
Author Affiliations +
Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56913
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
A LDD (lightly doped drain) etch process has been developed that reduces the damage to the silicon substrate caused by the oxide etch step and removes the damaged silicon in a subsequent etch step. The underlying silicon has the damage level restored to that of unetched silicon, as measured with thermal wave modulated reflectance. Contact resistivity of the devices etched with the optimum etch process is substantially reduced compared to a standard process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karen A. Reinhardt, Karen A. Reinhardt, Francois M. Dumesnil, Francois M. Dumesnil, } "Characterization of silicon damage during LDD oxide spacer etch with the use of thermal-wave-modulated reflectance", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56913; https://doi.org/10.1117/12.56913
PROCEEDINGS
15 PAGES


SHARE
Back to Top