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1 February 1992 Etching of copper at high rates via generation of volatile copper species
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Proceedings Volume 1593, Dry Etch Technology; (1992)
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Two approaches to etching of copper have been identified. The first approach involves generating various adducts of CuX where X = Cl or Br, LnCuX, where n = 1 or 2 and L is a Lewis base. Various compounds with general formula LnCuX have been identified where L = PMe3, PEt3, P(i-Pr)3, and PBU3. The second approach involves the reaction of Cu films with Cu(hfac)2 (where hfac = 1,1,1,5,5,5- hexafluoroacetylacetonate) and various L to form two equivalents of (hfac)CuL. Various (hfac)CuL species have been identified where L = alkyne (2-butyne, bis-trimethylsilyl acetylene, pentyne), olefin (1,5-cylooctadiene, vinyltrimethylsilane) and PR3 (PMe3, PEt3). Spontaneous etching experiments have been carried out using copper films in a hot-wall reactor. Etch rates up to 1 pm/min have been achieved at temperatures below 150°C. The high etch rates are the result of the high vapor pressures of the LnCuX and (hfac)CuL which are on the order of 0.1 -1 Torr at 60-100°C. The application of these and other chemical approaches to plasma and laser etching of copper is under investigation.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai-Ming Chi, Janos Farkas, Toivo T. Kodas, and Mark J. Hampden-Smith "Etching of copper at high rates via generation of volatile copper species", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992);

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