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Etching damage is evaluated by the forward current characteristics of p+/n+ junction s formed directly on the damaged silicon surface. The sample has a double layer structure (poly-silicon/silicon dioxide), and the poly-silicon layer is removed by dry etching with gas plasma. The degree of degradation of the forward current characteristics by reactive ion etching (RIE; cathode coupling mode) is greater than that by plasma etching (PE; anode coupling mode). In the RIE mode, heavier damage is accumulated at the surface by the bombardment of high energy ions through the thin oxide layer and causes the recombination current. This evaluation method is sensitive and useful, and it can detect the very small radiation damage.
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