1 February 1992 Evaluation of silicon surface damage induced by plasma radiation
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Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56910
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Etching damage is evaluated by the forward current characteristics of p+/n+ junction s formed directly on the damaged silicon surface. The sample has a double layer structure (poly-silicon/silicon dioxide), and the poly-silicon layer is removed by dry etching with gas plasma. The degree of degradation of the forward current characteristics by reactive ion etching (RIE; cathode coupling mode) is greater than that by plasma etching (PE; anode coupling mode). In the RIE mode, heavier damage is accumulated at the surface by the bombardment of high energy ions through the thin oxide layer and causes the recombination current. This evaluation method is sensitive and useful, and it can detect the very small radiation damage.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Yoneda, Masahiro Yoneda, K. Kawai, K. Kawai, Hiroshi Miyatake, Hiroshi Miyatake, Nobuo Fujiwara, Nobuo Fujiwara, K. Nishioka, K. Nishioka, Haruhiko Abe, Haruhiko Abe, } "Evaluation of silicon surface damage induced by plasma radiation", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56910; https://doi.org/10.1117/12.56910
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