We have applied Low Energy Ion Scattering(LEIS) to study initial stage of molecular beam epitaxy(MBE), which is highly sensitive to local atomic structures of the substrate surface. By demonstrating the sensitivity of the new monitor to atomic steps on the substrate surface, we demonstrate its usefulness for analyses of dynamical surface defect processes. We observe a characteristic variation of He+ scattering intensity with respect to the incident angles of primary ions to the substrate surface, and also find a correlation among the transition of growth process, the strain at growth interface and the surface flatness.
"In-situ monitoring of GaAs MBE by low-energy ion scattering", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56927; https://doi.org/10.1117/12.56927