1 February 1992 Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations
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Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56926
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Surface cleaning by pulsed UV-laser (wavelength = 193 nm) annealing in vacuo and laser-enhanced oxidation of GaSb single crystals in air are investigated by Auger and X-ray photoelectron spectroscopies. Superficial etching observed below energy densities of 100 mJ/cm2 is due to desorption of the Sb-oxides stimulated by photolysis. Above this threshold, the remaining Ga oxides are burried into the melted layer. The photolysis of the oxide also stimulates a layer-by-layer oxidation when GaSb is irradiated in air at lower energy densities (1 to 3 mJ/cm2 ).
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Etienne J. Petit, Y. Caudano, A. Gouskov, Georges Bougnot, "Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56926; https://doi.org/10.1117/12.56926
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