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1 February 1992 Reactive sputtering of Si/SiNx quarter-wave dielectric mirrors using in-situ laser reflectometry
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Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56925
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
We demonstrate a computer automated system for reactive sputter deposition of silicon and silicon nitride that features a laser reflectometer as an in-situ monitoring tool. A hollow anode was designed specifically for this purpose and enables in-situ reflectivity measurements at normal incidence to the wafer. We describe the use of this system for in-situ determination of the deposition rate and the material optical properties (refraedve index and loss). Finally we describe the fabrication of high precision Si/SiNx quarter-wave dielectric mirrors for opto-electronic applications by means of an in-situ feedback control algorithm.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dubravko I. Babic, Thomas E. Reynolds, Evelyn L. Hu, and John Edward Bowers "Reactive sputtering of Si/SiNx quarter-wave dielectric mirrors using in-situ laser reflectometry", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56925
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