Relationship between DUV lithography and etch for pattern transfer

Joyce Z. Witowski; Elliott Sean Capsuto; Satyendra S. Sethi; John Kochan

doi:10.1117/12.56928

1 February 1992 Relationship between DUV lithography and etch for pattern transfer

Joyce Z. Witowski, Elliott Sean Capsuto, Satyendra S. Sethi, John Kochan

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56928
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The development of tools and processes for a stable patterning process must successfully integrate the lithography and etch modules into a workable unit. As lithography becomes increasingly complex, such as in the case of excimer laser DUV photolithography, the link between the two processing steps becomes even more critical. This work characterized some of the challenges of integrating a DUV lithography process with the standard etching modules. The process studied utilized a negative acting photoresist and a spin-on Anti Reflection Coating. Pattern transfer processes were characterized in terms of critical dimension control, contamination concerns and critical dimension repeatability. Further, the effect of critical lithography parameters were examined as to their modulation of post etch profile characteristics and the effect on focus latitude.

Citation Download Citation

Joyce Z. Witowski, Elliott Sean Capsuto, Satyendra S. Sethi, and John Kochan "Relationship between DUV lithography and etch for pattern transfer", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56928

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