1 January 1992 Application of thermal imaging methodology for plasma etching diagnosis
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56633
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
This paper describes the application of thermal imaging by an infrared CCD TV camera with PtSi Schottky-barrier detectors for in-situ monitoring of plasma etching parameters. In-situ radiometric measurements were successfully employed for wafer temperature measurements and end-pint detection during plasma etching of polycrystalline silicon film on oxidized Si substrate for normal as well as oblique viewing. It was shown that thermal imaging can also be used for remote sensing of etch rate, heat of reaction and for measuring thermal time constants. The heat transfer coefficient of the thermal contact between the Si wafer and the water-cooled electrode can be determined from these measurements. The values of the heat transfer coefficients for the wafers just placed on the electrode without any provision of a good thermal contact were found to fall in the range of 8 to 12 J/m2-s-K and increased to about 200 J/m2-s-K when vacuum oil was used to improve the thermal contact.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vipulkumar Patel, Walter F. Kosonocky, S. Ayyagari, Mehul Patel, Bawa Singh, "Application of thermal imaging methodology for plasma etching diagnosis", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56633; https://doi.org/10.1117/12.56633

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