1 January 1992 Effects of feature edges on thickness readings of thin oxides
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992); doi: 10.1117/12.56645
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Measurements of ultra-thin films (<100A) and small geometries (< 1/mm) of IC product wafers require more than simply a smaller measurement spot size. An optical artifact has been discovered when using spectrophotometers to measure ultra-thin films near feature edges. A model of this effect will be presented. This artifact is a subtle effect that produces measurable reflectivity errors tens of microns from a feature edge. While this error is small, it is not negligible for film thickness measurements below 400A. Experiments have been performed on typical spectrophotometers and data from these experiments will be presented. These data will be compared to a newly developed laser-based dielectric film thickness measurement system that significantly reduces this edge effect.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jon L. Opsal, David Willenborg, Jeffrey T. Fanton, Susan M. Kelso, Jim P. Simmons, Allan Rosencwaig, "Effects of feature edges on thickness readings of thin oxides", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56645; https://doi.org/10.1117/12.56645
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KEYWORDS
Oxides

Reflectivity

Semiconducting wafers

Light scattering

Spectrophotometry

Scattering

Reflectometry

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