Paper
1 January 1992 Etch process characterization using neural network methodology: a case study
Michael T. Mocella, James A. Bondur, Terry R. Turner
Author Affiliations +
Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56637
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Polysilicon etching in a single-wafer, parallel-plate, magnetically- enhanced RIE tool has been examined using two different approaches to the non-physical modeling of the system characteristics. The behavior of both process responses (polysilicon and oxide etch rates) and plasma parameters (voltage and current metrics) have been examined as a function of five variables (rf power, pressure, magnetic field, gas flow rate, and He backside cooling). The variable-response mapping was examined using both neural network and response surface approaches. The greater fitting power of the former method is demonstrated in a side-by-side, internally consistent comparison of the same data set using these two approaches.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael T. Mocella, James A. Bondur, and Terry R. Turner "Etch process characterization using neural network methodology: a case study", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56637
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Cited by 41 scholarly publications.
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KEYWORDS
Neural networks

Data modeling

Process control

Etching

Metrology

Statistical analysis

Semiconducting wafers

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