1 January 1992 In-process thin film thickness measurement and control
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992); doi: 10.1117/12.56635
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
An in-situ ellipsometer was used to provide real-time thickness measurements and control of process end point during plasma etching of silicon dioxide. In-situ ellipsometer thickness values were obtained at intervals of 0.15 seconds. The measured thickness was used to determine end point to obtain a desired film thickness. The oxide films etched using in-process ellipsometer control had a thickness accuracy and reproducibility of 3 A. In comparison, timed etching of silicon dioxide films in the same reactor, a thickness reproducibility of only 69 A was obtained.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven A. Henck, "In-process thin film thickness measurement and control", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56635; http://dx.doi.org/10.1117/12.56635
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KEYWORDS
Etching

Process control

Semiconducting wafers

Oxides

Plasma etching

Silica

Silicon films

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