In-situ monitoring of semiconductor wafer temperature using infrared interferometry

C. F. A. van Os; Brian N. Chapman

doi:10.1117/12.56657

1 January 1992 In-situ monitoring of semiconductor wafer temperature using infrared interferometry

C. F. A. van Os, Brian N. Chapman

Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56657
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

This paper will briefly describe the theory of interferometry, and then detail the method, apparatus and preliminary results of experiments with the Tempest. Infrared laser interferometry is a well known technique for measuring layer thickness based upon assessing the optical thickness, or path length, L.

Citation Download Citation

C. F. A. van Os and Brian N. Chapman "In-situ monitoring of semiconductor wafer temperature using infrared interferometry", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56657

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