1 January 1992 In-situ monitoring of semiconductor wafer temperature using infrared interferometry
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992); doi: 10.1117/12.56657
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
This paper will briefly describe the theory of interferometry, and then detail the method, apparatus and preliminary results of experiments with the Tempest. Infrared laser interferometry is a well known technique for measuring layer thickness based upon assessing the optical thickness, or path length, L.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. F. A. van Os, Brian N. Chapman, "In-situ monitoring of semiconductor wafer temperature using infrared interferometry", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56657; https://doi.org/10.1117/12.56657
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KEYWORDS
Semiconducting wafers

Temperature metrology

Interferometry

Infrared radiation

Process control

Sensors

Signal detection

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