1 January 1992 Infrared diagnostics for semiconductor process monitoring
Author Affiliations +
Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992); doi: 10.1117/12.56649
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
In-situ infrared absorption techniques have been used to examine fundamental chemical and physical phenomena in semiconductor process plasmas. Fourier Transform infrared absorption spectroscopy (FTIR) is used to characterize the chemical environment in halocarbon containing plasmas which produce particles. A correlation is observed between the distribution of chemical species in the plasma and the extent of particle formation as demonstrated by laser light scattering. The addition of oxygen affects both the chemical species distribution and the amount of light scattering in the plasma. Also, high resolution infrared laser absorption spectroscopy is used to characterize rotational and vibrational temperatures in a parallel-plate N20 discharge. The relevance of these studies to semiconductor process plasmas is also discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. O'Neill, "Infrared diagnostics for semiconductor process monitoring", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56649; http://dx.doi.org/10.1117/12.56649
PROCEEDINGS
14 PAGES


SHARE
KEYWORDS
Plasmas

Absorption

Particles

Infrared radiation

Etching

Process control

Light scattering

Back to Top