Paper
1 January 1992 Infrared diode laser and laser-induced fluorescence diagnostics of an electron cyclotron resonance plasma etching tool
R. Claude Woods, R. L. McClain, L. J. Mahoney, E. A. Den Hartog, H. Persing, J. S. Hamers
Author Affiliations +
Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56655
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Two separate laser spectroscopic approaches have been used to investigate plasmas in the downstream region of a diverging field ECR etcher driven by a standard 1 kW ASTeX 2450 MHz source. Infrared absorption spectroscopy with a diode laser source and a multipass optical system has been used to monitor concentrations of CF2, CF3, and CF4 in pure CF4 or CHF3 or in mixtures of these with each other or with O2. These species concentrations, which in the cases of CF2 and CF4 are absolute, have been obtained as functions of both pressure and power. In the same tool details of the ion dynamics were studied using laser induced fluorescence (LIF) with a pulsed, etalon narrowed dye laser source, pumped by a nitrogen laser. Doppler limited line profiles of several rotational transitions of the (0-0) band of the B 2£+ — X 2E+ system of Nj were used to extract axial and transverse ion velocity distributions. Both pure nitrogen and nitrogen-helium mixtures were studied, and the transverse distributions were also obtained as a function of radial position. In the pressure region studied (0.5-4 mTorr) ion energies are generally much smaller than had been anticipated, a result we attribute to the major role played by collisions. We have also measured the translational temperature of neutral helium (by LIF) and the rotational temperature of Nj (by LIF and optical emission) for comparison purposes.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Claude Woods, R. L. McClain, L. J. Mahoney, E. A. Den Hartog, H. Persing, and J. S. Hamers "Infrared diode laser and laser-induced fluorescence diagnostics of an electron cyclotron resonance plasma etching tool", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56655
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Cited by 6 scholarly publications.
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KEYWORDS
Plasma

Ions

Absorption

Laser induced fluorescence

Etching

Process control

Semiconductor lasers

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