1 January 1992 Light scattering methods for semiconductor process monitoring and control
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56644
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Light scattering methods are being used in semiconductor device fabrication for such diverse purposes as particulate monitoring and linewidth control. In this overview, we focus on applications of light scattering for monitoring reactively ion etched trench profiles and plasma passivation of III-V materials.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Gottscho, Matthew Vernon, Jeffrey A. Gregus, E. Yoon, K. P. Giapis, Todd R. Hayes, William S. Hobson, Lee M. Clark, J. Kruskal, Diane Lambert, Avi Kornblit, D. Sinatore, "Light scattering methods for semiconductor process monitoring and control", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56644; https://doi.org/10.1117/12.56644
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